Here, we show the clear modulation of both AHE and THE by an electric field in the heterostructure of SrRuO 3/SrIrO 3/SrTiO 3 from magneto-transport and magneto-optic Kerr effect (MOKE) measurements. Furthermore, we can expect that the strong SOC in SrIrO 3 plays a positive role at the interface as well because both AHE and THE are magneto-transport phenomena driven by SOC. In view of the fact that ultrathin films of itinerant magnets have been a playground for electrical manipulation of spin states 1, 15, 16, 17, 18, 19, an electric field applied to the ultrathin heterostructure may provoke effective manipulation of the spin state contending with screening effects by itinerant electrons of SrRuO 3. In addition to the intrinsic AHE inherent to SrRuO 3 3, the combination of the strong SOC and the broken inversion symmetry gives rise to substantial Dzyaloshinskii–Moriya interaction (DMI) 6, 14 and the concomitant THE the underlying spin texture has been deduced to be the interface-driven skyrmion 12. Recent discovery of the THE in an oxide heterostructure composed of SrRuO 3 and SrIrO 3 12 brings an opportunity to develop electrical control because the strong SOC in SrIrO 3 13 induces a SOC-related phenomenon in neighboring ferromagnetic SrRuO 3. Despite mounting interest in electrical control of these Hall effects, however, their control in itinerant magnets has been elusive in conventional field-effect structures, that is, magnetic materials adjacent to gate dielectrics. In the case of N sk = 1, the topologically protected spin swirling texture is called magnetic skyrmion 6, 10, 11. Another intriguing example is the topological Hall effect (THE) originating from scalar spin chirality concomitant with non-coplanar spin structures such as in a frustrated pyrochlore magnet 5 and in metallic magnets characterized by a non-zero skyrmion number ( N sk) 6, 7, 8, 9. In some itinerant ferromagnets such as SrRuO 3 3, 4, the proportionality factor ( R S) is governed by k-space monopoles, i.e., singularities originating from band-crossings gapped by SOC not M but R S is potentially tuneable by electric field there. Among the magneto-transport processes, of interest here is the intrinsic anomalous Hall effect 2 (AHE), which is related to magnetization ( M) in Hall resistivity ( ρ AHE = R S M). Such properties have been attracting great interest as foundations for high-density and low-power-consumption spintronic devices because the properties coupled to the spin states enable spin manipulation without magnetic field variation or large current injection. Profound implications for the electric field control of spin states have been revealed through magneto-transport properties arising from the spin-orbit coupling (SOC) 1.

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